Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon

摘要

A thin two-side polished silicon etalon is demonstrated as a fixed-wavelength intracavity selector for the far-infrared p-Ge laser. The active cavity finesse is ～0.1. The wavelength position and spectral purity are maintained over a wide range of laser operating fields. A p-Ge laser with such a selector may find application in chemical sensing. THz imaging, or non-destructive testing.