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Deep-ultraviolet scatterometry for nanoparticle detection

机译:深紫外散射法用于纳米粒子检测

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摘要

The detection of surface particles is an important part of contamination control in semiconductor manufacturing. However, the minimum particle size required to be detected has been becoming smaller as integrated-circuit geometries shrink. Current visible-light detection systems can detect particles down to around 50 nm in polytyrene-latex-equivalent size and so are adequate for current geometries, but in the near future even particles as small as around 20 nm in diameter will become significant contaminants. This is beyond the capability of current visible-light scanners, but previous work has shown that deep ultraviolet scattering by such particles should be sufficient to enable their detection. Consequently we have constructed a deep/vacuum ultraviolet scatterometer capable of measuring scattering from semiconductor samples.
机译:表面颗粒的检测是半导体制造中污染控制的重要部分。但是,随着集成电路几何尺寸的缩小,需要检测的最小粒度已经变得越来越小。当前的可见光检测系统可以检测到聚丁二烯-乳胶当量尺寸低至约50 nm的颗粒,因此适用于当前的几何形状,但在不久的将来,即使直径仅为约20 nm的颗粒也将成为重要的污染物。这超出了当前可见光扫描仪的能力,但先前的工作表明,此类颗粒的深紫外线散射应足以进行检测。因此,我们构建了一种能够测量半导体样品散射的深/真空紫外散射仪。

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