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Gate-to-Cathode capacitor impact on Triac immunity and reliability

机译:栅极到阴极电容对双向可控硅抗扰度和可靠性的影响

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摘要

Designers are used to adding a capacitor between the control terminal and the drive reference terminal to increase immunity of power semiconductor devices to fast transient voltages. Even if this solution is good for most devices, such a design trick has to be avoided with Triacs. Indeed a gate-to-cathode capacitor significantly decreases the Triac robustness to dI/dt and overvoltages.
机译:设计人员习惯于在控制端子和驱动参考端子之间增加一个电容器,以提高功率半导体器件对快速瞬态电压的抵抗力。即使此解决方案对大多数设备都适用,Triacs也必须避免这种设计技巧。确实,栅极至阴极电容器大大降低了Triac的dI / dt和过电压的鲁棒性。

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