Property of Single-Crystalline Si TFTs Fabricated with μ-Czochralski (Grain Filter) Process

摘要

Formation of TFTs inside location-controlled large Si grains with a low temperature process is an attractive approach for realizing system-circuit integration with displays on a large glass substrate. Local structural variations of the substrate using photolithography allows an accurate location-control of the large Si grains in excimer-laser crystallization. Single-crystalline Si (c-Si) TFTs was formed inside a location-controlled large (6 μm) grain by μ-Czochraski process of a-Si film. The c-Si TFTs showed field effect mobility of 450 cm~2/Vs on average. Crystallization characteristics, spread of the TFT characteristics and effects of process parameters will be reviewed and discussed.