Simulation of Re-crystallization in Phase-change Recording Materials

摘要

PCS can precisely visualize the mark-forming process for a series of time steps, following the movements of the crystalline/amorphous boundary. The formation of the leading and trailing edges can be in accordance with the re-crystallization ring model. PCS can be used to develop a control strategy for write signals. Our findings are as follows: (1) The peak crystallization speed occurs at a lower temperature for Ag-InSbTe than GeSbTe. This makes the crystalline/amorphous boundary more vulnerable to the re-crystallization ring, both time-wise and space-wise. A large portion of the melted area will return to be crystalline state after being repeatedly swept by the re-crystallization ring. (2) For Ag-InSbTe, the re-crystallization ring around the beam center divides the amorphous mark into two separate parts depending on the previous pulses. The trailing half of the divided mark is re-crystallized and erased, so only the leading half remains. The distinct trailing edge of Ag-InSbTe is formed in this way.