Crystallization of GeSbTe and AgInSbTe under dynamic conditions

摘要

GST and AIST show similarities and differences in crystal structure and dynamic function. Both have high-symmetry crystal structures enabling them to crystallize at fast rates. The amount of amorphous material remaining after crystallization is about the same in both systems, and very small, indicating that most of the alloy in both systems can be completely crystallized. All disks tested showed good erasure at speeds up to at least 6 m/s. At higher speeds GeSbTe materials have a better erase performance than AgInSbTe. Erase times measured on an AgInSbTe disk at 650 nm and 780 nm were the same, indicating that the inherent erase time of a material and stack might not change with a change in laser spot size. Stack structure plays a large role in the quality of erase at different speeds. Under dynamic conditions, GeSbTe materials appear to function by a bulk nucleation crystallization mechanism or a combination of bulk nucleation and edge growth. AglnSbTe materials function by edge growth crystallization at slow speeds and bulk nucleation at high speeds.