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Deep Reactive Ion Etch Conditioning Recipe

机译:深度反应离子蚀刻调理配方

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摘要

Deep Reactive Ion Etch (DRIE) has historically been regarded as a process possessing inherent variable response. These varying responses include etch rate, mask selectivity, etch depth uniformity across the wafer, and the overall profile of the features being etched. Several factors are thought to lend themselves to this observed variation. Among them are process temperature disparities and residual parasitic compounds within the reaction chamber itself. A long term experiment was carried out to examine the statistical difference between DRIE runs with and without a specially defined pre-process conditioning recipe. This recipe was developed with the expectations of serving a twofold effect: the first serving as a "warm-up" of the process chamber to a steady state temperature, and the second being a stripping of residual organic compounds within the chamber that might otherwise add variance to the following DRIE process. The pre-process recipe has duration of ~30 minutes. The results of the experiment performed will clearly show that this conditioning recipe run prior to processing reduces the typical variance of DRIE processing.
机译:深度反应离子蚀刻(DRIE)历来被视为具有固有可变响应的过程。这些变化的响应包括蚀刻速率,掩模选择性,整个晶片上的蚀刻深度均匀性以及被蚀刻特征的整体轮廓。人们认为有几个因素可以导致这种观察到的变化。其中包括工艺温度差异和反应室内部残留的寄生化合物。进行了一项长期实验,以检查在有无特殊定义的预处理条件的情况下,DRIE运行之间的统计差异。该配方的开发具有双重作用:首先将工艺室“加热”到稳态温度,其次是去除室内的残留有机化合物,否则可能增加以下DRIE流程的差异。预处理配方的持续时间约为30分钟。进行的实验结果将清楚地表明,在处理之前运行的此调理配方可减少DRIE处理的典型差异。

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