P-channel MODFET as an Optoelectronic Detector

摘要

Optical response of both the gate current and the drain current in p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic MODFET is reported and analytic models are presented. Based on quantum nature of the two-dimensional carrier statistics in the channel and a new model for the gate current, the overall current variation under optical illumination is explained. The results show power law relation between the current variation and the optical intensity. Near-threshold region in saturation region is found to be most sensitive to the optical intensity variation.