Wide spectral width superluminescent diodes fabricated by quantum well intermixing

摘要

We report the performance and reliability of a 1500 nm superluminescent diode fabricated using a post-growth quantum well intermixing tecknique. The one-step impurity induced quantum well intermixing technique incorporating ion implantation through graded-thickness implant mask pattern is utilized here. By thermally diffusing the vacancies through the structure to the QW region, we can obtain a differential bandgap energy shift across the wafer by an amount directly related to the implant mask thickness. We use this effect to broaden the full-width half maximum of the superluminescent diode. Output powers of multiple milliwatts with full-width half maximum larger than 90 nm and spectral modulation better than 0.2 dB have been achieved from ridge waveguide multiple quantum well structure. The superluminescent diode is able to operate up to 85℃ showing good uncooled operation. The true inherent superluminescent mode operation of the superluminescent diode with full-width half maximum increases along with the increment of the current injection is also discussed. Accelerated aging at continuous constant current has been carried out at 70℃, 85℃ and 100℃. The life test shows a very positive result, demonstrating that this QWI technique is reliable for fabricating active devices.