Effect of in-plane and out-of-plane misorientation on the ferroelectric properties of thin film ferroelectric PZT infrared sensors on Si substrates

摘要

Pb(Zr,Ti)O_3 (PZT) a promising material for uncooled infrared detection, is an anisotropic perovskite with the best pyroelectric effect observed along the c-axis. Although c-axis orientated PZT films can be easily obtained on single crystal substrates with minimal lattice mismatch, it remains a challenge in practical cases when they must be grown on non-textured polymer based sacrificial coatings over Si substrates. To address this issue, we have been focused on development of thin textured MgO templates on non-textured substrates, such as amorphous SiO_2/Si and polymer coated SiO_2/Si, using an ion-beam-assisted deposition (IBAD) technique. C-axis-oriented multi-layered LaNiO_3/Pb(Zr,Ti)O_3/LaNiO_3 have been achieved and the ferroelectric properties, that impact the figure of merit for IR sensors, have been characterized.