Reliability of diode lasers for space applications

摘要

Qualification results of diode lasers for space applications are presented. Quantum well lasers (AlGaAs / GaAsP at 808 nm) were subjected to accelerated life test. No sudden failure was observed for 120 emitters at different stress conditions over 10,000 hours. Gradual degradation after more than 20,000 hours was modeled by recombination enhanced defect generation and statistically analyzed by the non-linear mixed effects model. The gradually degraded devices were investigated with cathodoluminescence. Statistical inference indicates the reliable operation of diode lasers throughout the typical life time of space equipment.