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Detectors for multi-energy radiography

机译:多能射线照相探测器

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摘要

For multi-energy digital radiography, a sandwich structure is proposed, comprising "scintillato -photodiode" (S-PD) type detectors. This will allow obtaining information on an object simultaneously for two or three energies in the 20-400 keV X-ray range. Criteria have been formulated and a procedure proposed that determine requirements to detector characteristics for distinction of specified substances. Under this procedure, the following characteristics have been determined for two-and three-energy detecting systems. For a two-energy detector system used for organic substances (Z_(eff)=6-8) and iron/steel (Z_(eff)=26), the X-ray tube anode voltage V_A=140 kV, sensitivity range of the low-energy detector (LED) and the high-energy detector (HED) 20-60 keV and 100-140 keV, respectively. The average detector sensitivity of LED should be closer to 40 keV, and that of HED ― to 140 keV. There is a limitation that is imposed upon the detector sensitivity by sensitivity of the radiographic system. For such variant, LED are made on the basis of a photodiode and a ZnSe(Te) scintillator, ensuring good sensitivity in this range and transparence in the HED range. HED can be made on the S-PD base using CsI(Tl), CdWO_4 or Cd_2O_2S. In a three-energy system, where elements wit Z_(eff)=6, 7 and 8 should also be determined detector sensitivity ranges should be as follows: LED ― 10-35 keV, medium-range energy detector (MED) ― 40-80 keV, HED ― 100-140 keV. Such subdivision into ranges is ensured by the use of a semiconductor senso r (e.g., silicon) as LED, S -PD with ZnSe(Te) as MED, and CsI(Tl), CdWO_4 or Cd_2O_2S ― as HED.
机译:对于多能量数字射线照相,提出了一种夹层结构,包括“闪烁光电二极管”(S-PD)型检测器。这将允许同时获取20-400 keV X射线范围内两个或三个能量的物体信息。已经制定了标准,并提出了确定对区分特定物质的检测器特性要求的程序。在此程序下,对于两能量和三能量检测系统已确定了以下特性。对于用于有机物质(Z_(eff)= 6-8)和铁/钢(Z_(eff)= 26)的双能探测器系统,X射线管阳极电压V_A = 140 kV,灵敏度范围为低能量检测器(LED)和高能量检测器(HED)分别为20-60 keV和100-140 keV。 LED的平均探测器灵敏度应接近40 keV,而HED的平均探测器灵敏度应接近140 keV。放射线照相系统的灵敏度对检测器的灵敏度有一定的限制。对于这种变体,LED是基于光电二极管和ZnSe(Te)闪烁体制造的,从而确保了在此范围内的良好灵敏度和在HED范围内的透明性。可以使用CsI(Tl),CdWO_4或Cd_2O_2S在S-PD基础上进行HED。在三能量系统中,还应确定元素Z_(eff)= 6、7和8,探测器的灵敏度范围应如下:LED ― 10-35 keV,中程能量探测器(MED)― 40- 80 keV,HED-100-140 keV。通过使用半导体传感器(例如硅)作为LED,使用ZnSe(Te)作为MED的S -PD和使用CsI(Tl),CdWO_4或Cd_2O_2S-作为HED来确保将这种细分范围划分为各种类型。

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