Current-voltage characteristic of C-RAM nano-cell-element

摘要

Nano-cell-elements of chalcogenide random access memory (C-RAM) based on Ge_2Sb_2Te_5 films have been successively fabricated by using the focused ion beam method. The minimum contact size between the Ge_2Sb_2Te_5 phase change film and bottom electrode film in the nano-cell-element is in diameter of 90nm. The current-voltage characteristics of the C-RAM cell element are studied using the home-made current-voltage tester in our laboratory. The minimum SET current of about 0.3mA is obtained.