Dielectric Characterization and Microstructures of Pr_6O_(11)-Doped Bi_4Ti_3O_(12) Thin Films

摘要

Pr_6O_(11)-doped bismuth titanate and random oriented Bi_xPr_yTi_3O_(12)( y = 0.3, 0,6, 0.9, 1.2) thin films were fabricated on Pt/Ti/SiO_2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Pr doping into BIT caused a shift of the Curie temperature (T_c) of the BIT from 675℃ to 578 , 517, 398 , and 315℃ for the films with y = 0.3, 0.6, 0.9, and 1.2, respectively. The experimental results indicated that Pr doping into BIT result in a remarkable improvement in dielectric properties. Raman analysis shows that Pr and Pr ions substitution only appears in A-sit.