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Luminescence property and synthesis of sulfur-doped ZnO nanowires by electrochemical deposition

机译:电化学沉积和掺杂硫的ZnO纳米线的发光性质及其合成

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Sulfur-doped zinc oxide (ZnO) nanowires have been successfully synthesized by an electric field-assisted electrochemical deposition in porous anodized aluminum oxide template at room temperature. The structure, morphology, chemical composition and photoluminescence properties of the as-synthesized ZnO:S nanostructures were investigated. X-ray diffraction and the selected area electron diffraction results reveal that the as-synthesized products are single phase with hexagonal wurtzite structure with a highly preferential orientation in the (101) direction. Transmission electron microscopy observations indicate that the nanowires are uniform with an average diameter of 70 nm and length up to several tens of micrometers. X-ray photoelectron spectroscopy further reveals the presence of S in the ZnO nanowires. Room-temperature photoluminescence (PL) is observed in the sulfur-doped ZnO nanowires which exhibits strong near-band-edge (NBE) ultraviolet peaks at 378 nm and 392 nm and week green emissions at 533 nm and 507 nm. A blue emission at 456 nm and violet emissions at around 406, 420 and 434nm were also observed in the PL spectrum for the as-synthesized ZnO:S nanowires. The result of the PL spectrum showed that S-doping had an obvious effect on the luminescence property of typical ZnO nanowires.
机译:通过在室温下在多孔阳极氧化铝模板中进行电场辅助电化学沉积,已成功合成了掺杂硫的氧化锌(ZnO)纳米线。研究了合成后的ZnO:S纳米结构的结构,形态,化学组成和光致发光性能。 X射线衍射和选定区域电子衍射结果表明,所合成的产物是具有六方纤锌矿结构的单相,在(101)方向具有高度优先的取向。透射电子显微镜观察表明,纳米线是均匀的,平均直径为70 nm,长度可达几十微米。 X射线光电子能谱进一步揭示了ZnO纳米线中S的存在。在掺硫的ZnO纳米线中观察到室温光致发光(PL),该纳米线在378 nm和392 nm处显示出很强的近带边缘(NBE)紫外峰,在533 nm和507 nm处显示出一周的绿色发射。对于合成后的ZnO:S纳米线,在PL光谱中还观察到456 nm处的蓝光发射和406、420和434nm处的紫光发射。 PL光谱的结果表明,S掺杂对典型的ZnO纳米线的发光性能有明显的影响。

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