Advanced Ion Column Solution for Low Ion Damage Characterization and Ultra-Fine Process

摘要

To meet rising requirements for the low-damage ultra-fine process with the focused ion beam (FIB) in the materials science and semiconductor industry, the advanced ion column and corresponding advanced applications as a solution are developed and demonstrated. Novel high-speed high kV milling, low kV cleaning and imaging capabilities have enabled the creation of impeccable ultra-thin structures such as TEM samples and nanometer scale structures. Minimizing Ga+ induced sample damage is achieved through the optimized final cleaning at 500 eV ion landing energy with the new ion optics, which utilizes close control of the ion dose, beam incidence angle, spot size, pattern algorithm and imaging performance. Newly introduced process solutions achieve the improved process throughput. Initial demonstration is performed on the latest 14 and 10 nm scale FinFET device. Validation of the thinnest <0.8 nm thick ion damage layer on the <7 nm thick lamella structure was confirmed through TEM analysis.