首页> 外文会议>Asia and South Pacific Design Automation Conference 1999 January 18-21, 1999 Wanchai, Hong Kong >The Hierarchical h-Adaptive 3-D Boundary Element computation of VLSI Itnerconnect Capacitance
【24h】

The Hierarchical h-Adaptive 3-D Boundary Element computation of VLSI Itnerconnect Capacitance

机译:VLSI Itnerconnect电容的分层h-自适应3-D边界元计算

获取原文
获取原文并翻译 | 示例

摘要

In VLSI circuits with deep sub-micron, the parasitic capacitance from interconnect is a very important factor determining circuit performances such as power and time-delay. The Boundary Element Method(BEM) is an effective tool for solving Laplacian's equation applied in the parasitic capacitance extraction. In this paper, a hierarchical h-adaptive BEM is presented. It constructs a 3-D linear hierarchical shape function based on constant boundary element and uses previous computations and solutions. Hence, it reduces much computations and solutions. Hence, it reduces much computation in adaptive procedure. Besides, a combination of residual-type estimator and reduced Z-Z error estimator for more reliable and efficient estimation of error is presented. Some numerical results show that this method is effective.
机译:在具有深亚微米级的VLSI电路中,来自互连的寄生电容是决定电路性能(例如功率和时延)的非常重要的因素。边界元法是解决拉普拉斯方程在寄生电容提取中应用的有效工具。本文提出了一种分层的h自适应BEM。它基于恒定边界元素构造3-D线性层次形状函数,并使用以前的计算和解决方案。因此,它减少了很多计算和解决方案。因此,它减少了自适应过程中的大量计算。此外,提出了残差型估计器和简化的Z-Z误差估计器的组合,可以更可靠,更有效地估计误差。数值结果表明该方法是有效的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号