Analyzing Memory Effect in RF Power Amplifier using Three-box Modeling

摘要

A Three-box modeling has been used to simulate the behavioral modeling of the microwave power amplifiers (PAs) in this paper. By this modeling, the cause of the memory effect has been analyzed, and we draw the conclusion that the memory effect is due to effect of the impedance of bias circuit and match network at envelope frequency and second time harmonica frequency. The results of the simulation and measurement have been given to shown the memory effect of a power amplifier.