Injection Mesurements and Simulation for a Floating Gate MOSFET Designed for Radiation Measurements

摘要

In this paper, a Floating Gate transistor designed and fabricated to be used as a radiation sensor is presented, and the charge injection process through an injection electrode is studied. The device was successfully charged, and the injection process was simulated in a SPICE software, considering that the injection mechanism was Fowler-Nordheim tuneling. The parameters for the Fowler-Nordheim current were found and simulations successfully reproduced the measurements. These simulations will allow to improve the desing and the charge injection setup.