Spin Seebeck voltage enhancement by inserting Mn or IrMn at interface of YIG/TasoWso

摘要

Spin Seebeck voltage generation is an attractive technology owing to the simple structure, but the generated voltage is too small for practical use still. Therefore, we successfully enhanced the generated voltage by using TasoWso alloy with the large spin Hall angle[1]. However, TasoWso alloy has the small spin mixing conductance at the interface with YIG, it is necessary to increase the spin mixing conductance. It has reported that the insertion of the antiferromagnetic oxide, NiO, was effective to improve the generated voltage and it originated from the magnon scattering[2]. On the other hand, we found that the nonmagnetic layer was slightly oxidized, which is cause of the generated voltage degradation by using XAS analysis[3]. In this report, in order to enhance the magnon scattering without oxidation at the interface, we inserted the metallic layer Mn or IrMn into the interface between YIG and TasoWso.