An all I-line 0.22 um T-gate process is demonstrated. A resist structure suitable for metal deposition and lift-off is constructed sequentially with two different resist materials. The lithographic process is described in details in this paper.
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机译:演示了全I线0.22 um T型浇口工艺。用两种不同的抗蚀剂材料依次构造适合于金属沉积和剥离的抗蚀剂结构。本文详细描述了光刻工艺。
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