Effect of solvents and cross-link reaction group concentration on via filling performance in gap fill materials

摘要

This study relates to characterization of gap fill materials for advanced ArF lithography process that allows the formation of the gap fill materials having an excellent planarization property on a substrate having irregularities such as nanometer scale pattering holes and trenches to increase the depth of focus and resolutions, and large CF4 gas etching rate as compared with that of a resist while providing an excellent resist pattern without causing an intermixing with a resist layer, and that it can be specifically used in a damascene process for the introduction of a wiring material Cu (copper) used for reducing a wiring delay of a semiconductor device in recent years. In the characterization of gap fill materials for an excellent planarization property of lithography, it was obtained two key factors such as a specific relationship between the cross-link reaction group concentration of the polymers contained in the gap fill materials and the via filling performance, and a specific relationship between a solvent used in the polymer solution and the via filling performance. The application of gap fill materials based on this characterization is one of the most promising processes ready to be investigated into mass production of the present 65 - 90 nm node dual damascene lithography.