Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences (CAS), 72 Wenhua Road, Shenyang 110016, China;
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences (CAS), 72 Wenhua Road, Shenyang 110016, China;
Pb(Zr_(0.52)Ti_(0.48))O_3 thin films; sol-gel method; microwave annealing; crystallization; microstructure; ferroelectric;
机译:衬底对溶胶凝胶衍生的Pb(Zr_(0.52)Ti_(0.48))O_3薄膜微波退火结晶的影响
机译:通过基板与Pb(Zr_(0.52)Ti_(0.48))O_3膜之间的热膨胀失配来控制应力的Pb(Zr_(0.52)Ti_(0.48))O_3厚膜
机译:改善溅射PB_(1.10)的电性能(Zr_(0.52),Ti_(0.48))O_3 / PB_(1.25)(Zr_(0.52),Ti_(0.48))O_3多层薄膜
机译:基质对微波退火的溶胶 - 凝胶衍生Pb(Zr_(0.52)Ti_(0.48))O_3薄膜结晶的影响
机译:镧锶锰(LA0.67SR0.33MNO3)和锆钛酸铅(PBZR0.52TI0.48O3)薄膜异质结构中的自极化感应磁电耦合
机译:在高度c轴取向的Pb(Zr0.52Ti0.48)O3薄膜中具有超低应变滞后的大压电应变并且在非晶玻璃基板上呈柱状生长
机译:金属有机物分解沉积pb(Zr0.52Ti0.48)O3薄膜的结晶,铁电和断裂韧性对退火的依赖性