Abstract: A short review is presented of some present andpossible future applications of free electron lasers(FELs) to the study of nonlinear optical (NLO)properties of condensed matter in the infrared spectralregion. Emphasis is put on semiconductors, and inparticular GaAs and related III-V systems, and recentwork on organic semiconductors. Suggestions are alsogiven for experiments in Ge and narrow gapsemiconductors such as InSb and HgCdTe. The desirable(or, in some cases, essential) properties of the FELfor the particular experiment are emphasized. Thefollowing topics are addressed: bandgap (single andmultiphoton) resonant processes; photoionizationkinetics of semiconductors; the FEL as probe for farinfrared (FIR) gain measurement; FIR second harmonicgeneration and nonlinear optics. For convenience theseare taken in spectral order from the near andmid-infrared (mainly linac-based FEL) to FIR (mainlyVan de Graaff-based FEL) applications.!22
展开▼
机译：摘要：简要回顾了自由电子激光器（FEL）在研究红外光谱区中凝聚态物质的非线性光学（NLO）性质方面的一些当前和未来的应用。重点放在半导体，特别是GaAs和相关的III-V系统上，以及对有机半导体的最新研究。还提出了在锗和窄间隙半导体如InSb和HgCdTe中进行实验的建议。强调了特定实验的FEL理想的（或在某些情况下是必要的）特性。解决以下主题：带隙（单光子和多光子）共振过程；半导体的光电离动力学； FEL作为远红外（FIR）增益测量的探针; FIR二次谐波和非线性光学。为方便起见，从近红外和中红外（主要是基于直线加速器的FEL）到FIR（主要是基于Van de Graaff的FEL）应用按光谱顺序进行了测量！22
展开▼
