CsN_3 as an air stable and low temperature evaporable novel n doping material for high efficiency and low driving voltage in organic light-emitting diodes

摘要

CsN_3 was developed as a novel n doping material with air stability and low deposition temperature. Evaporation temperature of CsN_3 was similar to that of common hole injection material and it worked well as a n dopant in electron transport layer. Driving voltage was lowered and high power efficiency was obtained in green phosphorescent devices by using CsN_3 as a dopant in electron transport layer. It could also be used as a charge generation layer in combination with MoO_3. In addition, n doping mechanism study revealed that CsN_3 is decomposed into Cs and N_2 during evaporation. This is the first work reporting air stable and low temperature evaporable n dopant in organic light-emitting diodes.