首页> 外文会议>7th annual international wafer-level packaging conference amp; tabletop exhibition 2010 >FINE PITCH 3D DISPENSABLE ELECTRICAL INTERCONNECTS FOR SYSTEM IN PACKAGE SOLUTIONS
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FINE PITCH 3D DISPENSABLE ELECTRICAL INTERCONNECTS FOR SYSTEM IN PACKAGE SOLUTIONS

机译:用于包装解决方案的系统的精细间距3D可分配电气互连

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The use of dispensable conductive materials to create fine pitch 3D electrical interconnects has been proven by Vertical Circuits Inc. as a low cost, high reliability alternative to create System in Package (SIP) solutions. This paper discusses the benefits of dispensing the 3D electrical interconnects instead of using traditional wire bond or high cost TSV processes to create the SIP. Pad pitches achieved are typically less than 65um between die pads, a conformal coating of a dielectric material with the subsequent selective laser ablation of the desired pads allows all lines to be dispensed in a single application with all lines adjacent to each other. Compared to traditional wire bond applications, the overall interconnect inductance is lower with comparable capacitive and resistive values enabling higher frequencies to be utilized. Due to this process, complex multi-step stacking and bonding applications that jeopardize known good die (KGD) and increase the XY footprint of the SIP are eliminated. Furthermore, the entire die stacking process can be executed in a single step before the application of the electrical interconnect material; minimizing overall material handling and repetitive die stack processes that increase the probability of defects leading to expensive yield loss. Methods for matching the Coefficient of Thermal Expansion (CTE) for the stacked components within a SIP will be demonstrated as well as surface treatments to enable fine pitch dispense and increase product reliability. JEDEC L3 reliability data will be presented to demonstrate SIP robustness using this technology.
机译:垂直电路公司已经证明使用可分配的导电材料来创建细间距3D电互连是制造系统级封装(SIP)解决方案的低成本,高可靠性的替代方法。本文讨论了分配3D电气互连的好处,而不是使用传统的引线键合或高成本TSV流程来创建SIP的好处。裸片之间的焊盘间距通常小于65um,电介质材料的保形涂层以及随后对所需焊盘的选择性激光烧蚀允许在单个应用中分配所有线,且所有线彼此相邻。与传统的引线键合应用相比,整体互连电感更低,电容和电阻值相当,可利用更高的频率。由于此过程,消除了危及已知合格芯片(KGD)并增加SIP的XY占地面积的复杂的多步骤堆叠和键合应用。此外,整个芯片堆叠过程可以在施加电互连材料之前的单个步骤中完成;最大程度地减少总体材料处理和重复的芯片堆叠工艺,从而增加出现缺陷的可能性,从而导致昂贵的良率损失。将演示用于SIP内堆叠组件匹配热膨胀系数(CTE)的方法以及表面处理,以实现细间距分配并提高产品可靠性。将展示JEDEC L3可靠性数据,以证明使用该技术的SIP鲁棒性。

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