Viscosity and its Temperature Dependence of Molten Semiconductors

摘要

Viscosity of molten Si, Ge, GaSb and InSb have been measured to make the behavior of viscous flow clear by using an oscillating viscometer. Various materials of the crucible were used for Si to study the effect of the materials. GaSb and InSb were sealed into double crucible to prevent the evaporation. The viscosities obtained showed very good Arrhenius linearity with similar absolute viscosity and activation energy. The behavior was completely different from the previous works in which abnormal behavior of the viscosity was reported.