Electrodeposition of Compound Semiconductor Film, ZnTe, in Molten Chloride

摘要

Electrochemical behaviors of Zn and Te were investigated in eutectic ZnCl_2-KCl (54.1-45.9 mol%) including TeCl_4. The underpotential deposition, UPD, of Zn was observed in this system. The co-electrodeposition of Zn and Te gave rise to form the Zn-Te alloy on W or Ni substrate. The deposits were formed as particles, not a thin film on the W substrate. The size of the deposit gradually grew up with increasing electrolysis temperature. On the other hand, a Ni-Te alloy film was mainly obtained on the Ni substrate, other than Zn-Te alloy at 673 K. Increasing temperature up to 708 K above the melting point of Zn tended to prevent the formation of the Ni-Te alloy, and accelerate the formation of the Zn-Te alloy.