首页> 外文会议>6th International Conference on Advanced Optoelectronics and Lasers >Broadband semiconductor optical amplifiers of NIR range based on nanoheterostructures
【24h】

Broadband semiconductor optical amplifiers of NIR range based on nanoheterostructures

机译:基于纳米异质结构的NIR范围的宽带半导体光放大器

获取原文
获取原文并翻译 | 示例

摘要

The series of travelling-wave semiconductor optical amplifiers (SOAs) based on QW-heterostructures used for the production of broadband superluminescent diodes (SLDs) is developed. Small-signal fiber-to-fiber gain of SOA-modules is about 25dB. They possess spectral gain bands of 70–125 nm at 10 dB level. Together they cover the IR-range of 750–1100 nm. Their high reliability at CW output optical power of up to 50 mW ex SMF was demonstrated. An example of the application of one of the developed SOA-modules as an active element of high-performance tunable laser is presented.
机译:开发了一系列基于QW异质结构的行波半导体光放大器(SOA),用于生产宽带超发光二极管(SLD)。 SOA模块的小信号光纤到光纤增益约为25dB。它们在10 dB的电平下具有70–125 nm的光谱增益带。它们共同覆盖了750-1100 nm的红外范围。展示了他们在SMF高达50 mW的CW输出光功率下的高可靠性。给出了将开发的SOA模块之一用作高性能可调谐激光器的有源元件的示例。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号