首页> 外文会议>2019年第66回応用物理学会春季学術講演会講演予稿集 >Giant MR Ratio by Using Metastable bcc-Cu Spacer Layer in Epitaxial Current In-Plane Giant Magnetoresistance Devices
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Giant MR Ratio by Using Metastable bcc-Cu Spacer Layer in Epitaxial Current In-Plane Giant Magnetoresistance Devices

机译:外延电流面内巨磁阻器件中使用亚稳态bcc-Cu间隔层实现巨磁阻比

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Current in-plane giant magnetoresistance (CIP-GMR) has been used in magnetic sensorapplications because it has low noises, adjustable resistance and almost no bias voltagedependence of MR ratio. However, its magnetoresistance (MR) ratio has been saturated forlong years although larger value is necessary to increase the signal output for various magneticsensor applications. It is well known that good lattice and band matchings are necessary toobtain large MR ratio. Since previous study shows ideally perfect lattice match on bcc-Fe/bcc-Cu/bcc-Fe because of the formation of metastable bcc-Cu spacer, it is worth to investigateepitaxial bcc Co_(1-x)Fe_x-based CIP-GMR spin valves with thin Cu spacer. The stacking of MgOsubs./Co_(1-x)Fe_x/Cu/Co_(1-x)Fe_x/IrMn/Ta were deposited by sputtering with x = 10, 25, 50, 67 and100. We found a large enhancement of MR ratio from 4% in pure Fe (x = 100) to over 20% inbcc-CoFe (x = 25-67) as shown in Fig.1. The largest observed MR ratio of 26% in Co_(50)Fe_(50) isclose to the highest ever reported value (28%). We also fabricated antiferromagneticallyexchange coupled MgO subs./Co_(50)Fe_(50)/Cu/Co_(50)Fe_(50)/MgO GMR stack, where the MgO cappinglayer is to introduce a specular reflection of conduction electron at the interface with CoFe. Asa result, we observed giant MR ratio of 40% which is the highest MR in trilayer CIP-GMR everreported. As shown in Fig.2, our TEM analysis confirmed Co50Fe50 and Cu layers coherentlyconnected without any dislocation because of the formation of bcc Cu spacer as previouslyreported in Fe/Cu/Fe stack. Our first principle calculation confirmed the improvement ofband matching with bcc Cu from Fe to Co50Fe50 is the origin for observed giant MR ratio.
机译:当前的面内巨磁电阻(CIP-GMR)已用于磁传感器 应用,因为它具有低噪声,可调电阻和几乎没有偏置电压的优点 MR比的依赖性。但是,其磁阻(MR)比已经饱和 尽管需要更大的值才能增加各种磁传感器的信号输出,但仍需要很长时间 传感器应用。众所周知,良好的晶格和能带匹配对于 获得较大的MR比。由于先前的研究显示理想的bcc-Fe / bcc-晶格匹配 Cu / bcc-Fe由于形成了亚稳态的bcc-Cu间隔基,值得研究 具有薄铜垫片的外延bcc Co_(1-x)Fe_x基CIP-GMR自旋阀。氧化镁的堆积 通过溅射以x = 10、25、50、67和10的方式沉积subs./Co_(1-x)Fe_x/Cu/Co_(1-x)Fe_x/IrMn/Ta 100.我们发现MR率从纯铁(x = 100)的4%大幅提高到纯铁的20%以上。 bcc-CoFe(x = 25-67)如图1所示。 Co_(50)Fe_(50)中观察到的最大MR比为26%为 接近有史以来的最高价值(28%)。我们还反铁磁性地制造了 交换耦合的MgO子./Co_(50)Fe_(50)/Cu/Co_(50)Fe_(50)/MgO GMR堆栈,其中MgO上限 层是在与CoFe的界面处引入传导电子的镜面反射。作为 结果,我们观察到40%的巨人MR率,这是有史以来三层CIP-GMR的最高MR 报告。如图2所示,我们的TEM分析证实了Co50Fe50和Cu层相干 如前所述形成bcc Cu隔离层,连接时没有任何错位 以Fe / Cu / Fe堆栈报告。我们的第一个原理计算证实了 Fe到Co50Fe50与bcc Cu的能带匹配是观察到的巨MR比的起源。

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