首页> 外文会议>5th International Symposium on the Industrial Applications of the Moessbauer Effect Aug 13-18, 2000 Virginia Beach, Virginia >CEMS Investigations of Fe-Silicide Phases Formed by the Method of Concentration Controlled Phase Selection
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CEMS Investigations of Fe-Silicide Phases Formed by the Method of Concentration Controlled Phase Selection

机译:浓度控制相选择方法形成的硅化铁相的CEMS研究

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Conversion electron Moessbauer spectroscopy (CEMS) measurements have been made on Fe-silcide samples formed using the method of concentration controlled phase selection. To prepare the samples a 10 nm layer of Fe_(30)M_(70) (M = Cr, Ni) was evaporated onto Si(100) surfaces, followed by evaporation of a 60 nm Fe layer. Diffusion of the Fe into the Si substrate and the formation of different Fe―Si phases was achieved by subjecting the evaporated samples to a series of heating stages, which consisted of (a) a 10 min anneal at 800℃ plus etch of the residual surface layer, (b) a further 3 hr anneal at 800℃, (c) a 60 mJ excimer laser anneal to an energy density of 0.8 J/cm~2 , and (d) a final 3 hr anneal at 800℃. CEMS measurements were used to track the Fe-silicide phases formed. The CEMS spectra consisted of doublets which, based on established hyperfine parameters, could be assigned to α- or β-FeSi_2 or cubic FeSi. The spectra showed that β-FeSi_2 had formed already at the first annealing stage. Excimer laser annealing resulted in the formation of a phase with hyperfine parameters consistent with those of α-FeSi_2. A further 3 hr anneal at 800℃ resulted in complete reversal to the semiconducting β-FeSi_2 phase.
机译:已经对使用浓度控制相选择方法形成的硅化铁样品进行了转换电子Moessbauer光谱(CEMS)测量。为了制备样品,将10 nm Fe_(30)M_(70)(M = Cr,Ni)层蒸发到Si(100)表面上,然后蒸发60 nm Fe层。通过将蒸发后的样品进行一系列加热步骤,将Fe扩散到Si衬底中并形成不同的Fe-Si相,包括以下步骤:(a)在800℃退火10分钟,并对残留表面进行蚀刻层,(b)在800℃下再退火3个小时,(c)60 mJ准分子激光退火到能量密度为0.8 J / cm〜2,(d)在800℃下最后退火3个小时。 CEMS测量用于跟踪形成的铁硅化物相。 CEMS光谱由双峰构成,基于建立的超精细参数,可以将它们分配给α-或β-FeSi_2或立方FeSi。光谱表明,在第一退火阶段已经形成了β-FeSi_2。准分子激光退火导致形成具有与α-FeSi_2相一致的超精细参数的相。在800℃下再退火3个小时,完全转变为半导体β-FeSi_2相。

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