A 900 MHz, 2.7 V Highly Linear Driver Amplifier Using 0.5 μm Si BiCMOS

摘要

A highly linear driver amplifier for 900 MHz cellularrntransmitter IC is presented. The amplifier operates from a 2.7 V to 3.3 V supply. At 2.7 V, ACPR (Adjacent Channel PowerrnRatio) of transmitter IC is as high as 50 dBc with an outputrnpower of 8.7 dBm. The high ACPR of transmitter IC is due tornthe high linearity of driver amplifier. To improve linearity of driver amplifier, we also investigate the appropriate emitter degeneration inductance at constant power by Volterra-series analysis. The driver amplifier is fabricated using a 0.5 μm BiCMOS process.