New Mechanism of Body Charging in Partially Depleted SOI-MOSFETs with Ultra-Thin Gate Oxides

摘要

The aggressive scaling of the gate oxide leads to direct gate tunneling current, which affects the floating-body effects in partially-depleted SOI MOSFETs. Experiments and simulations show that the gate-to-body current charges the body causing an unexpected 'kink' effect to occur at low drain voltage. This kink results in a second peak of transconductance, whose time-dependent behavior and practical consequences are investigated.