Characteristics of HfO_2 pMOSFET with Ultrashallow Junction Prepared by Plasma Doping and Laser Annealing

摘要

HfO_2 pMOSFETs with ultra-shallow junction which was prepared by plasma doping (PLAD) and excimer laser annealing (LA) were fabricated. Through the low energy plasma doping and laser annealing, the junction depth of 20nm and sheet resistance of 230Ω/sq. were obtained. To apply the laser annealing process to transistor fabrication process, various gate electrodes were evaluated under laser annealing conditions. For the first time, the electrical characteristics of the laser annealed HfO_2 pMOSFET with Al/TaN gate were demonstrated.