Antimony as Substitute for Arsenic to Eliminate Enhanced Diffusion Effects

摘要

Heavy Sb and As doping have been studied with regard to their effect on enhanced diffusion. Injection of Si self-interstitials due to electrical deactivation of high As concentrations causes significant broadening of steep doping profiles. This effect can be eliminated when Sb doping is used instead of As. We demonstrate that highly doped Sb wells facilitate the fabrication of the steep doping profiles needed for high performance bipolar devices. Sb can also be used to fabricate low-resistivity, shallow S/D extensions for nMOSFETs with excellent device characteristics.