Department of Electronics and Communication Engineering, JIS College of Engineering, Block A, Phase III, Kalyani, India;
Department of Electronics and Communication Engineering, JIS College of Engineering, Block A, Phase III, Kalyani, India;
Department of Physics, JIS College of Engineering, Block A, Phase III, Kalyani, India;
MOSFET; Threshold voltage; Logic gates; Transconductance; Semiconductor device modeling; Performance evaluation; Metals;
机译:<![cdata [p-
机译:微观结构上的数据集Ni
机译:<![CDATA [cdata [CORUNDUM型结构的合成和阳极特性(FE
机译:组成分数对INAS
机译:重费米和非费米液体行为,超导电性和磁性低电子金属。
机译:趋磁细菌中磁铁矿(Fe(inf3)O(inf4))和钙铁矿(Fe(inf3)S(inf4))的受控生物矿化
机译:垂直InAs纳米线MOSFET id