A study on the bottom-gate ITO-stabilized ZnO thin-film transistors

摘要

Bottom-gate thin-film transistors (TFTs) with ITO-stabilized ZnO channel layers were successfully fabricated by co-sputtering of ZnO target and ITO target. A comparative study is made on the ITO-stabilized ZnO TFT with different ITO deposition power and different annealing time at 300 °C. It was found that ITO-stabilized ZnO TFT with ITO deposition power of 70W and annealing time of 60min exhibited fairly high electrical characteristics, especially with a saturation field-effect mobility of 21cm²V^-1s^-1 and the threshold voltage as low as -0.12V. In addition, it also shows good output curves including good electrode contact and gate control ability. The proposed bottom-gate ITO-stabilized ZnO TFT is expected to be used in next-generation active-matrix flat panel displays.