A 93.9–105.6 GHz amplifier using customized on-chip inductor

摘要

A five-stage 93.9 GHz-105.6 GHz common-source CMOS amplifier is presented in this paper. The customized on-chip inductor and transmission line (TL) are designed for matching networks. Fabricated in a 65nm bulk CMOS process, this amplifier achieves a peak gain of 9 dB at 100 GHz and 11.7GHz 3-dB bandwidth range from 93.9 GHz to 105.6 GHz, consuming total power of 49.2 mW under 1.2 V voltage supply. The area of this amplifier is 0.5mm2 including pads.