TiO2:Nb film thickness influences on the amorphous InGaZnO thin film transistors with Mo/TiO2:Nb source-drain electrodes

摘要

Various thicknesses (0, 5 and 70 nm) TiO₂:Nb (TNO) films are used for the fabrication of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with Mo/TNO source-drain (S-D) electrodes. All the as-prepared TFTs show similar electrical performance. However, the on-current of a-IGZO TFT with Mo/TNO(5 nm) S-D electrodes decreases dramatically after 300 °C annealing due to the large S-D parasitic resistance. In contrast, the S-D contact remain low for Mo/TNO(70 nm) S-D electrodes by 300 °C annealing.