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4Gb perpendicular STT-MRAM with compact cell structure and beyond

机译:具有紧凑单元结构的4Gb垂直STT-MRAM

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摘要

Since the discovery of a theoretical idea of spin-transfer torque (STT) [1], STT-MRAM has attracted a great interest as a candidate of universal memory.
机译:自从发现自旋传递扭矩(STT)的理论思想以来[1],STT-MRAM作为通用存储器的候选者引起了极大的兴趣。

著录项

  • 来源
  • 会议地点 Dublin(IE)
  • 作者单位

    Toshiba Electronics Korea Corporation, Seoul, The Republic of Korea;

    Toshiba Electronics Korea Corporation, Seoul, The Republic of Korea;

    Toshiba Electronics Korea Corporation, Seoul, The Republic of Korea;

    Toshiba Electronics Korea Corporation, Seoul, The Republic of Korea;

    SK hynix Inc., Icheon-si, The Republic of Korea;

    SK hynix Inc., Icheon-si, The Republic of Korea;

    Toshiba Electronics Korea Corporation, Seoul, The Republic of Korea;

    SK hynix Inc., Icheon-si, The Republic of Korea;

    SK hynix Inc., Icheon-si, The Republic of Korea;

    SK hynix Inc., Icheon-si, The Republic of Korea;

    Toshiba Electronics Korea Corporation, Seoul, The Republic of Korea;

    Toshiba Electronics Korea Corporation, Seoul, The Republic of Korea;

    SK hynix Inc., Icheon-si, The Republic of Korea;

    Toshiba Electronics Korea Corporation, Seoul, The Republic of Korea;

    SK hynix Inc., Icheon-si, The Republic of Korea;

    SK hynix Inc., Icheon-si, The Republic of Korea;

    SK hynix Inc., Icheon-si, The Republic of Korea;

    SK hynix Inc., Icheon-si, The Republic of Korea;

    SK hynix Inc., Icheon-si, The Republic of Korea;

    Toshiba Electronics Korea Corporation, Seoul, The Republic of Korea;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Magnetic tunneling; Transistors; Resistance; Integrated circuits; Writing; Switches; Magnetic multilayers;

    机译:磁性隧穿;晶体管;电阻;集成电路;书写;开关;磁性多层;

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