Dynamical dielectric function of 2DEG in HgTe-based quantum wells in RPA formalism

摘要

The Random-Phase Approximation (RPA) dielectric function for HgTe quantum well with the semimetal conductivity, which allows for real eight band kp approximation energy spectrum, was numerically modeled in this work. To obtain the Lindhard dielectric function dependence on scattering wave-vector and frequency, the simulations were provided for HgCdTe/HgTe/HgCdTe quantum well of 20 nm width with two n-type delta-doped layers in the barriers at the temperature T = 77 K. The obtained Lindhard dielectric function for the HgTe quantum well was compared with the graphene one.