Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India;
Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India;
Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India;
Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India;
Nanowires; Gallium nitride; Resonant frequency; Piezoelectric polarization; Microscopy; Molecular beam epitaxial growth; Silicon;
机译:等离子体辅助分子束外延(PA-MBE)对在Si(111)上生长的Pt / AlGaN进行热退火的研究
机译:等离子体辅助分子束外延生长的GaN纳米线的极性转换
机译:通过等离子体辅助分子束外延生长GaN纳米线的极性转换
机译:压电响应力显微镜(PFM)通过等离子体辅助分子束外延生长的GaN纳米线的表征(PA-MBE)
机译:电子回旋共振等离子体辅助分子束外延生长氮化镓铟的生长优化和表征。
机译:等离子体辅助分子束外延通过液滴外延对Si(111)上的GaN纳米点进行表征和密度控制
机译:射频等离子体辅助分子束外延表征铟表面活性剂生长的GaN薄膜
机译:氮等离子体辅助分子束外延生长的c轴GaN纳米线的稳态和瞬态光电导