The structure and dielectric properties of BaZrxTi1−xO3 and BaSnxTi1−xO3 thin films for microwave applications

摘要

BZT and BTS thin films were fabricated in-situ by RF magnetron on Pt/Ti/Al2O3 substrate (r-cut) in oxygen atmosphere. All films with thickness 400 to 500 nm were crystallized in perovskite phase. For the electrical studies the sandwich capacitors were fabricated based on BZT and BTS films. Tunability at 20 V reached 3.5 with dielectric losses as 0.03 at 2 GHz.