首页> 外文会议>2016 IEEE 37th International Electronics Manufacturing Technology amp; 18th Electronics Materials and Packaging Conference >Understanding the effect of molding compound mechanical properties on the electrical performances drift of hall effect sensor
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Understanding the effect of molding compound mechanical properties on the electrical performances drift of hall effect sensor

机译:了解模塑料的机械性能对霍尔效应传感器电性能漂移的影响

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The innovative technology of hall effect sensor (HES) has proven to reach new level in electronic industry. However, it is undeniable that new technology also needs time to be developed into the perfect product. The hall sensor had experienced some issues related to the electrical performance. Several possible factors such as IC design, humidity, delamination, compound visco-elastic property, thermal aging and die attach glue have been included as the cause to this problem. Research studies collaboration between Carsem (M) Sdn. Bhd. and Customer Z was achieved in order to understand the relationship between the electrical performance of hall sensor and the mechanical properties of molding compound. Thermal hysteresis test by Customer Z resulted in sensitivity drift approximately more than 1.5%. The shifts in the hysteresis cycle indicate that the HES is experiencing internal stress from the package. Two types of mold compound were tested in Carsem Technology Centre (CTC) Material Lab at Carsem (M) Sdn Bhd under different post mold cure condition. These mold compound thermal and mechanical properties was determined using in-house lab equipment such as thermal mechanical analyzer (TMA) and dynamic mechanical analyzer (DMA). This technical paper will explore the new method used to predict mold compound stability using TMA equipment and its correlation with the thermal hysteresis of the electrical sensitivity drift. Other testing such as thermal aging, stress relaxation by DMA equipment and moisture absorption test will be further discussed as we conclude the most suitable mold compound to be used in the production of HES package.
机译:霍尔效应传感器(HES)的创新技术已被证明达到了电子工业的新水平。但是,不可否认的是,新技术也需要时间才能发展成为完美的产品。霍尔传感器遇到了一些与电气性能有关的问题。导致此问题的原因包括IC设计,湿度,分层,复合粘弹性,热老化和芯片粘接胶等几种可能的因素。 Carsem(M)Sdn。Bhd。之间的研究合作。 Bhd。和客户Z是为了了解霍尔传感器的电性能与模塑料的机械性能之间的关系而获得的。客户Z进行的热磁滞测试导致灵敏度漂移大约超过1.5%。磁滞周期的变化表明HES正在承受封装的内部应力。在不同的模具后固化条件下,在Carsem(M)Sdn Bhd的Carsem技术中心(CTC)材料实验室中测试了两种类型的模塑料。这些模塑料的热和机械性能是使用内部实验室设备(例如热机械分析仪(TMA)和动态机械分析仪(DMA))确定的。该技术论文将探索使用TMA设备预测模塑料稳定性的新方法及其与电灵敏度漂移的热滞相关。当我们得出最适合用于HES封装生产的模塑料时,将进一步讨论其他测试,例如热老化,通过DMA设备进行的应力松弛和吸湿测试。

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