CMOS compatible pinpointed fabrication of nanoscale silicon oxide islands array

摘要

In this paper, a novel method is introduced to fabricate nanoscale silicon oxide islands array. Rectangle islands patterns with edge length less than 100 nm are fabricated by traditional contact lithography and buffered oxide etching process. Precise sacrificial layer etching technique is used to control the size of islands from micro-scale to nanoscale accurately. This fabrication method is CMOS compatible and can realize mass production of nanoscale patterns array in very low cost.