【24h】

Gap reduction based frequency tuning for AlN capacitive-piezoelectric resonators

机译:AlN电容压电谐振器基于间隙减小的频率调谐

获取原文
获取原文并翻译 | 示例

摘要

A voltage controlled resonance frequency tuning mechanism, capable of effecting 1,500 ppm frequency shifts or more, is demonstrated for the first time on an AlN capacitive-piezoelectric resonator. The key enabler here is a compliant top electrode suspension that moves with applied voltage to effectively vary capacitance in series with the device, hence changing its series resonance frequency. Capacitive-piezoelectric AlN micromechanical resonators, i.e., those with electrodes not directly attached to the piezoelectric material, already exhibit high Q-factors compared to attached-electrode counterparts, e.g., 8,800 versus 2,100 at 300 MHz; are on/off switchable; and, as shown in this work, can exhibit electromechanical coupling C=C of 1.0%. This new ability to tune frequency without the need for external components now invites the use of on-chip corrective schemes to improve accuracy or reduce temperature-induced frequency drift, making an even more compelling case to employ this technology for frequency control applications.
机译:首次在AlN电容式压电谐振器上演示了能够实现1,500 ppm或更高频率偏移的压控谐振频率调谐机制。这里的关键因素是顺应性的顶部电极悬架,该悬架随施加的电压移动以有效地改变与设备串联的电容,从而改变其串联谐振频率。电容压电AlN微机械谐振器,即那些电极未直接连接到压电材料的谐振器,与连接电极的谐振器相比,已经显示出较高的Q因子,例如在300 MHz时为8,800对2,100;开/关可切换;如这项工作所示,并且可以表现出1.0%的机电耦合C = C。现在,这种无需外部元件即可进行频率调谐的新功能就可以使用片上校正方案来提高精度或减少温度引起的频率漂移,这使得将这种技术用于频率控制应用的情况变得更加诱人。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号