首页> 外文会议>2015 IEEE Magnetics Conference >Control and generation of domain walls near magnetic compensation in ferrimagnetic CoTb via applied thermal gradient
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Control and generation of domain walls near magnetic compensation in ferrimagnetic CoTb via applied thermal gradient

机译:通过施加的热梯度控制和产生亚铁磁CoTb中磁补偿附近的畴壁

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Recently, the manipulation of domain walls using magnetic field [1] spin polarized current [2] electric field [3] and temperature gradient [4] have attracted significant interest. This control of domain wall nucleation and propagation could lead to new advances in the field of data storage [5] and magnetic logic [6]. Here we report on the use of a thermal gradient to nucleate, propagate and annihilate well-defined domain walls. The domain walls are created in lithographically patterned wires of amorphous, ferrimagnetic CoTb alloy thin films. The net magnetization of these films is defined by the competition between the magnetization of the antiferromagnetically coupled Co sublattice and Tb sublattice. For some compositions, there exists a given temperature known as the compensation temperature (T), where the net saturation magnetization of the sample is zero due to the equal magnitude and opposite direction of the two competing sublattice moments. Below T, the net magnetization of the film aligns along the dominant Tb magnetization, while above T the direction of the magnetization is controlled by the Co sublattice. By crossing this compensation temperature under applied field, it is possible to change the dominant sublattice - creating a shift in the net magnetization direction of the film.
机译:最近,使用磁场[1]自旋极化电流[2]电场[3]和温度梯度[4]操纵畴壁引起了人们的极大兴趣。对畴壁成核和传播的控制可能会导致数据存储[5]和磁逻辑[6]领域的新进展。在这里,我们报告使用热梯度来成核,传播和well灭定义明确的畴壁。畴壁是在非晶,亚铁磁性CoTb合金薄膜的平版印刷线路中创建的。这些膜的净磁化强度由反铁磁耦合的Co子晶格和Tb子晶格之间的竞争确定。对于某些成分,存在一个称为补偿温度(T)的给定温度,在该温度下,由于两个竞争亚晶格矩的大小相等且方向相反,样本的净饱和磁化强度为零。在T以下,薄膜的净磁化强度沿主要的Tb磁化强度排列,而在T之上,磁化方向由Co亚晶格控制。通过在施加的磁场下越过该补偿温度,可以改变主要的亚晶格-在薄膜的净磁化方向上产生偏移。

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