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Influence of dispersion methods of inorganic powders on performance of PI/Al2O3 composite films

机译:无机粉体分散方法对PI / Al 2 O 3 复合膜性能的影响

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PI/AlO films have been extensively studied due to its' excellent corona resistance. In this paper, a series of PI/AlO films with inorganic content of 16% are prepared via in-situ polymerization method. The AlO filler is dispersed by three different methods include mechanical dispersion, sanding mechanical dispersion and ultrasonic dispersion respectively. The films are characterized by scanning electron microscope (SEM). Results show that the AlO powders of PI/AlO films prepared by sanding mechanical dispersion dispersed most uniform, then the films prepared by ultrasonic dispersion and the films prepared by mechanical dispersion. In addition, the mechanical properties, the breakdown field strength and resistance to corona time of PI/AlO films are tested and the regions of breakdown aging and corona resistance aging of the films are characterized by scanning electron microscope (SEM). Test results show that the mechanical properties and corona resistance performance of PI/AlO films prepared by sanding mechanical dispersion are optimal, the tensile strength, elongation at break and corona resistance times of PI/AlO are 115.4MPa, 12.72% and 332min respectively, the breakdown field strength of the composite films is only 189.84kV/mm and not as good as that of the films(217.5kV/mm) prepared by ultrasonic dispersion. SEM analysis shows that the perforation position of the breakdown aging and corona resistance aging are external and internal of the electrode, respectively. The region of the corona resistance aging area is annular, the perforation of corona aging is within the ring, which indicate that the corona resistance aging is caused by the accumulation of the space charge.
机译:PI / AlO薄膜具有出色的耐电晕性,因此已得到广泛研究。本文采用原位聚合法制备了一系列无机含量为16%的PI / AlO薄膜。通过三种不同的方法分别分散AlO填料:机械分散,砂磨机械分散和超声分散。膜通过扫描电子显微镜(SEM)表征。结果表明,通过机械分散法打磨制备的PI / AlO薄膜的AlO粉末分散最均匀,其次为超声分散法制备的薄膜和机械分散法制备的薄膜。另外,测试了PI / AlO薄膜的力学性能,击穿场强和耐电晕性,并通过扫描电子显微镜(SEM)表征了薄膜的击穿时效区和耐电晕性时效区。试验结果表明,砂磨机械分散法制备的PI / AlO薄膜的力学性能和耐电晕性能最佳,PI / AlO的拉伸强度,断裂伸长率和耐电晕性分别为115.4MPa,12.72%和332min。复合膜的击穿场强仅为189.84kV / mm,不及超声分散制备的膜的击穿场强(217.5kV / mm)。 SEM分析表明,击穿时的穿孔位置和电晕电阻时效的穿孔位置分别在电极的内部和内部。耐电晕老化区域的区域是环形的,电晕老化的穿孔在环内,这表明耐电晕老化是由空间电荷的积累引起的。

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