Unite de Rech. Mater. et Energies Renouvelables URMER, Univ. of Tlemcen, Tlemcen, Algeria;
Vickers hardness; elastic moduli; elemental semiconductors; indentation; microhardness; oxidation; porosity; porous semiconductors; silicon; Si; Vickers microhardness; elastic modulus; instrumented microindentation; mechanical parameter; mechanical properties; nonoxidized porous silicon; oxidation; oxidized porous silicon; porosity; silicon substrate; Films; Mechanical factors; Oxidation; Scanning electron microscopy; Silicon; Substrates; Elastic modulus; Microhardness; Oxidation; Porous silicon; Vickers indentation;
机译:氧化和非氧化多孔硅的传输,介电和光学性质之间的相关性
机译:多孔硅表面上维氏显微硬度的测定
机译:p型纳米结构硅中的维氏显微硬度,多孔层厚度和孔隙率之间的相关性
机译:基于氧化多孔硅牺牲技术的硅电容麦克风
机译:氢钝化和氧化的多孔硅的深度依赖性光致发光响应。
机译:基于多层双布拉格镜结构的多孔硅光学生物传感器检测氨氧化细菌(AOB)
机译:氧化和非氧化多孔硅的维氏微硬度