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S3-P10: Embedded microfluidic cooling of high heat flux electronic components

机译:S3-P10:高热通量电子元件的嵌入式微流体冷却

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In this paper, an embedded cooling approach is introduced for thermal management of High Power Amplifier (BPA) MMICs utilizing a microfluidic manifold bonded to the bottom of the HPA. The approach is applicable to current and future HPA technologies such as, for example, GaN/SiC and GaN/Diamond. The microfluidic contains a distributed network of micron-scale impingement jets and flow channels which are produced using a very flexible 3-Dimensional additive, photolithographic process. Computational fluid dynamics (CFD) simulations have been used to investigate the effect of manifold design parameters, such as jet shape, size and jet pattern on thermal performance and pressure drop. The approach is shown to be capable of simultaneously managing HEMT-level heat fluxes of greater than 40 kW/cm and die-level heat fluxes of 1 kW/cm very efficiently. Potential thermal enhancement afforded by die back-side etching are also demonstrated
机译:在本文中,介绍了一种嵌入式冷却方法,该方法利用结合到HPA底部的微流体歧管对高功率放大器(BPA)MMIC进行热管理。该方法适用于当前和未来的HPA技术,例如GaN / SiC和GaN / Diamond。微流体包含微米级冲击射流和流动通道的分布式网络,这些网络是使用非常灵活的三维添加剂光刻工艺生产的。计算流体动力学(CFD)模拟已用于研究歧管设计参数(如射流形状,大小和射流模式)对热性能和压降的影响。已证明该方法能够非常高效地同时管理大于40 kW / cm的HEMT级热通量和1 kW / cm的管芯级热通量。还展示了通过芯片背面蚀刻提供的潜在热增强

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